Product Summary

The AOD444 is an N-channel enhancement mode field effect transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

Parametrics

AOD444 absolute maxing ratings: (1)Drain-Source Voltage VDS: max=60V; (2)Gate-Source Voltage VGS: max=±20V; (3)Continuous Drain Current TC=25℃ ID: 12A; TC=100℃ ID: max=12A; (4)Pulsed Drain Current IDM: max=30A; (5)Avalanche Current IAR: max=12A; (6)Repetitive avalanche energy L=0.1mH EAR: max=23mJ; (7)Junction and Storage Temperature Range TJ, TSTG: -55 to 175℃.

Features

AOD444 features: (1)VDS (V) = 60V; (2)ID = 12 A; (3)RDS(ON) < 60 mΩ (VGS = 10V); (4)RDS(ON) < 85 mΩ (VGS = 4.5V).

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AOD444
AOD444

MOSFET N-CH 60V 12A TO-252
Data Sheet
0-1: $0.45
1-25: $0.31
25-100: $0.27
100-250: $0.23
250-500: $0.20
500-1000: $0.16
AOD444L
AOD444L
Other

Data Sheet
Negotiable