Product Summary

The STBV32 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. The STBV32 uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32 is designed for use in compact fluorescent lamp application.

Parametrics

STBV32 absolute maximum ratings: (1)Collector-Emit ter Voltage (VBE=0), VCES: 700V ; (2)Collector-Emit ter Voltage (IB=0), VCEO: 400V ; (3)Emitter-Base Voltage (IC=0), VEBO: 9V ; (4)Collector Current, IC: 1.5A ; (5)Collector Peak Current (tp < 5 ms), ICM: 3A ; (6)Base Current, IB: 0.75A ; (7)Base Peak Current (tp < 5 ms), IBM: 1.5A ; (8)Total Dissipation at Tc=25℃, Ptot: 1.1 W ; (9)Storage Temperature, Tstg: -65 to 150℃ ; (10)Max. Operating Junction Temperature, Tj: 150℃.

Features

STBV32 features: (1)ST13003 silicon in TO-92 package; (2)medium voltage capability; (3)low spread of dynamic parameters; (4)minimum lot-to-lot spread for reliableoperation; (5)very high switching speed.

Diagrams

STBV32 INTERNAL SCHEMATIC DIAGRAM

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STBV32
STBV32
Other

Data Sheet
Negotiable 
STBV32-AP
STBV32-AP

TRANS NPN 400V 1.5A TO-92
Data Sheet
0-2000: $0.05
2000-6000: $0.05
6000-10000: $0.04
10000-50000: $0.04
50000-100000: $0.04
100000-200000: $0.04
STBV32G-AP
STBV32G-AP
STMicroelectronics
MOSFET H/V FST SWCH PW TRNS NPN
Data Sheet
0-2000: $0.12
2000-2950: $0.12
2950-5000: $0.11
5000-10000: $0.11
STBV32G
STBV32G
STMicroelectronics
Transistors RF Bipolar Small Signal H/V FST SWCH PW TRNS NPN
Data Sheet
0-3700: $0.12
3700-5000: $0.11
5000-10000: $0.11