2N6028RLRAG

programmable unijunction transistor, TO92, 40V, 2A, 300mW, Low Offset Voltage

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Price:: US $0.10~1.00 / piece [Get Latest Price]

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PartNumber:: 2N6028RLRAG

Brand:: ON SEMICONDUCTOR - ONS | Pack: TO | D/C: 10+

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Products Upload time: 2011-12-28

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Part Number:2N6028RLRAG
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Product Summary

The 2N6028RLRAG is a programmable unijunction transistor. It is designed to enable the engineer to program unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse and timing circuits. The 2N6028RLRAG may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO–92 plastic package for high–volume requirements, this package is readily adaptable for use in automatic insertion equipment.

Parametrics

2N6028RLRAG absolute maximum ratings: (1)Power Dissipation, Derate Above 25℃, PF: 300mW; 1/qJA: 4.0mW/℃; (2)DC Forward Anode Current, Derate Above 25℃, IT: 150mA; 2.67mA/℃; (3)DC Gate Current IG: ±50 mA; (4)Repetitive Peak Forward Current. ITRM: 1.0Amps; 2.0Amps; (5)Non–Repetitive Peak Forward Current, 10 μs Pulse Width, ITSM: 5.0 Amps; (6)Gate to Cathode Forward Voltage VGKF: 40 Volts; (7)*Gate to Cathode Reverse Voltage VGKR: -5.0 Volts; (8)*Gate to Anode Reverse Voltage VGAR: 40 Volts; (9)*Anode to Cathode Voltage(1) VAK: ±40 Volts; (10)Operating Junction Temperature Range TJ: –50 to +100℃; (11)*Storage Temperature Range Tstg: –55 to +150℃.

Features

2N6028RLRAG features: (1)Programmable-RBB, η, IV and IP; (2)Low On-state Voltage 1.5 Volts Maximum @ IF = 50 mA; (3)Low Gate to Anode Leakage Current: 10 nA Maximum; (4)High Peak Output Voltage- 11 Volts Typical; (5)Low Offset Voltage-0.35 Volt Typical (RG = 10 k ohms); (6)Device Marking: Logo, Device Type, e.g., 2N6027, Date Code.