(Hong Kong)
Product Summary
The 2SK3469 is a N-channel silicon power MOSFET.
Parametrics
2SK3469 absolute maximum ratings: (1)Drain-source voltage: 500 V; (2)Continuous drain current: ±12 A; (3)Pulsed drain current: ±48 A; (4)Gate-source voltage: ±30 V; (5)Repetitive or non-repetitive: 12 A; (6)Maximum Avalanche Energy: 217 mJ; (7)Maximum Drain-Source dV/dt: 20 kV/μs; (8)Peak Diode Recovery dV/dt: 5 kV/μs; (9)Max. power dissipation: 2.16 W at Ta=25 ℃, 50 W at Tc=25 ℃; (10)Operating and storage temperature range: -55 to +150 ℃.
Features
2SK3469 features: (1)High speed switching; (2)Low on-resistance; (3)No secondary breadown; (4)Low driving power; (5)Avalanche-proof.
Diagrams
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 2SK3469-01MR |
Other |
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Data Sheet |
Negotiable |
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2SK3001 |
Other |
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Data Sheet |
Negotiable |
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2SK3009 |
Other |
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Data Sheet |
Negotiable |
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2SK3012 |
Other |
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Data Sheet |
Negotiable |
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2SK3013 |
Other |
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Data Sheet |
Negotiable |
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2SK3017 |
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MOSFET N-CH 900V 8.5A TO-3PN |
Data Sheet |
Negotiable |
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2SK3017(F) |
Toshiba |
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm |
Data Sheet |
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