(Hong Kong)
Product Summary
NPN silicon planar epitaxial transistor BFG540 is intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. The transistor BFG540 is mounted in plastic SOT143B and SOT143R packages.
Parametrics
BFG540 absolute maximum system: (1)VCBO collector-base voltage open emitter: - 20 V; (2)VCES collector-emitter voltage RBE = 0: - 15 V; (3)VEBO emitter-base voltage open collector: - 2.5 V; (4)IC DC collector current: - 120 mA; (5)Ptot total power dissipation Ts ≤ 60 ℃; note 1 - 400 mW; (6)Tstg storage temperature: -65 +150 ℃; (7)Tj junction temperature: - 150 ℃.
Features
BFG540 features: (1)High power gain; (2)Low noise figure; (3)High transition frequency; (4)Gold metallization ensures excellent reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BFG540/XR,215 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal Single NPN 15V 120mA 400mW 100 9GHz |
Data Sheet |
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 |
BFG540W T/R |
NXP Semiconductors |
Transistors RF Bipolar Small Signal TAPE-7 TNS-RFSS |
Data Sheet |
Negotiable |
|
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|
BFG540W/X T/R |
NXP Semiconductors |
Transistors RF Bipolar Small Signal NPN 8V 120mA 9GHZ |
Data Sheet |
Negotiable |
|
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|
BFG540W/X,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal NPN 8V 120mA 9GHZ |
Data Sheet |
|
|
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|
BFG540W/XR,135 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal Single NPN 15V 120mA 500mW 100 9GHz |
Data Sheet |
|
|
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 |
BFG540WXR |
Other |
|
Data Sheet |
Negotiable |
|
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|
BFG540WX |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BFG540W,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal TAPE-7 TNS-RFSS |
Data Sheet |
|
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