Product Summary

The FDN359AN is an N-Channel Logic Level PowerTrench MOSFET. It is produced using the advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The FDN359AN is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parametrics

FDN359AN absolute maximum ratings: (1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage: ±20 V; (3)ID Maximum Drain Current - Continuous: 2.7 A; - Pulsed: 15 A; (4)PD Maximum Power Dissipation: 0.5 W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150 ℃.

Features

FDN359AN features: (1)2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V; RDS(ON) = 0.060 Ω @ VGS = 4.5 V; (2)Very fast switching; (3)Low gate charge (5nC typical); (4)High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.

Diagrams

FDN359AN diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDN359AN
FDN359AN
Fairchild Semiconductor
MOSFET SSOT-3 N-CH 30V
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDN302P
FDN302P
Fairchild Semiconductor
MOSFET SSOT-3 P-CH 2.5V
Data Sheet
0-1: $0.28
1-25: $0.23
25-100: $0.16
100-250: $0.15
FDN302P_Q
FDN302P_Q
Fairchild Semiconductor
MOSFET SSOT-3 P-CH 2.5V
Data Sheet
0-1: $0.12
1-25: $0.12
25-100: $0.11
100-250: $0.11
FDN304P
FDN304P
Fairchild Semiconductor
MOSFET SSOT-3 P-CH 1.8V
Data Sheet
0-1: $0.31
1-25: $0.25
25-100: $0.18
100-250: $0.16
FDN304PZ
FDN304PZ
Fairchild Semiconductor
MOSFET P-Ch PowerTrench Specified 1.8V
Data Sheet
0-1: $0.32
1-25: $0.26
25-100: $0.18
100-250: $0.16
FDN304PZ_Q
FDN304PZ_Q
Fairchild Semiconductor
MOSFET P-Ch PowerTrench Specified 1.8V
Data Sheet
Negotiable 
FDN306P
FDN306P
Fairchild Semiconductor
MOSFET P-Ch PowerTrench Specified 1.8V
Data Sheet
0-1: $0.34
1-25: $0.27
25-100: $0.19
100-250: $0.15