Product Summary

The N-Channel enhancement mode power field effect transistor FQPF4N90C is produced using Fairchild proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF4N90C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQPF4N90C absolute maximum ratings: (1)VDSS Drain-Source Voltage: 900 V; (2)ID Drain Current: Continuous (TC = 25℃): 4 * A; Continuous (TC = 100℃): 2.3 * A; (3)IDM Drain Current - Pulsed: 16 * A; (4)VGSS Gate-Source Voltage: ± 30 V; (5)EAS Single Pulsed Avalanche Energy: 570 mJ; (6)IAR Avalanche Current: 4 A; (7)EAR Repetitive Avalanche Energy: 14 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD Power Dissipation (TC = 25℃): 140 W; Derate above 25℃: 1.12 W/℃; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 ℃; (11)TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.

Features

FQPF4N90C features: (1)4A, 900V, RDS(on) = 4.2Ω @VGS = 10 V; (2)Low gate charge ( typical 17nC); (3)Low Crss ( typical 5.6 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQPF4N90C Gate Charge Test Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQPF4N90C
FQPF4N90C
Fairchild Semiconductor
MOSFET 900V N-Ch Q-FET advance C-Series
Data Sheet
0-1: $0.70
1-25: $0.61
25-100: $0.56
100-250: $0.48
FQPF4N90CT
FQPF4N90CT
Fairchild Semiconductor
MOSFET 900V, 4A, NCH MOSFET
Data Sheet
0-1: $0.69
1-25: $0.60
25-100: $0.56
100-250: $0.48