(Hong Kong)
Product Summary
The FQU1N60C is an N-Channel enhancement mode power field effect transistor. The FQU1N60C is produced using the proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQU1N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
FQU1N60C absolute maximum ratings: (1)VDSS Drain-Source Voltage: 600 V; (2)ID Drain Current - Continuous (TC = 25℃): 1 A; - Continuous (TC = 100℃): 0.6 A; (3)IDM Drain Current - Pulsed: 4 A; (4)VGSS Gate-Source Voltage: ±30 V; (5)EAS Single Pulsed Avalanche Energy: 33 mJ; (6)IAR Avalanche Current: 1 A; (7)EAR Repetitive Avalanche Energy: 2.8 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD Power Dissipation (TA = 25℃): 2.5 W; Power Dissipation (TC = 25℃): 28 W; - Derate above 25℃: 0.22 W/℃; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 ℃; (11)TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds: 300 ℃.
Features
FQU1N60C features: (1)1A, 600V, RDS(on) = 11.5Ω @ VGS = 10 V; (2)Low gate charge ( typical 4.8nC); (3)Low Crss (typical 3.5 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
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Negotiable |
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FQU1N60CTU |
Fairchild Semiconductor |
MOSFET 600V N-Channel Adv Q-FET C-Series |
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