IRF640NS

HEXFET Power MOSFET, 200V, 18A, D2PAK, 0.15Ω, IRF640NS

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Price:: US $0.10~1.00 / piece [Get Latest Price]

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PartNumber:: IRF640NS

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2011-12-26

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Part Number:IRF640NS
US $0.10 - 1.00
IRFP260N

US $1.30 - 4.20 / Piece
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TOP259EN

US $1.10 - 3.20 / Piece
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Product Summary

The IRF640NS is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRF640NS provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The IRF640NS is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Parametrics

IRF640NS absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 18 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 13 A; (3)IDM, Pulsed Drain Current: 72 A; (4)PD @TC = 25℃, Power Dissipation: 150 W; (5)Linear Derating Factor: 1.0 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 247 mJ; (8)IAR Avalanche Current: 18 A; (9)EAR Repetitive Avalanche Energy: 15 mJ; (10)dv/dt Peak Diode Recovery: 8.1V/ns; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to 175℃; (12)Soldering Temperature for 10 seconds: 300℃; (13)Mounting Torque, 6-32 or M3 Screw: 10lb·in (1.1N·m).

Features

IRF640NS features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.