(Hong Kong)
Product Summary
The IRF7425TRPBF is a P-Channel HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making the IRF7425TRPBF ideal in a variety of power applications. With these improvements, the IRF7425TRPBF can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
Parametrics
IRF7425TRPBF absolute maximum ratings: (1)VDS Drain- Source Voltage: -20 V; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ -4.5V: -15 A; (3)ID @ TA= 70℃ Continuous Drain Current, VGS @ -4.5V: -12 A; (4)IDM Pulsed Drain Current: -60A; (5)PD @TA = 25℃ Power Dissipation: 2.5 W; (6)PD @TA = 70℃ Power Dissipation: 1.6 W; (7)Linear Derating Factor: 20 mW/℃; (8)VGS Gate-to-Source Voltage: ±12 V; (9)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150 ℃.
Features
IRF7425TRPBF features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)Surface Mount; (4)Available in Tape & Reel.
Diagrams
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 IRF7425TRPBF |
International Rectifier |
MOSFET MOSFT PCh -20V -15A 8.2mOhm 87nC |
Data Sheet |
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