Product Summary
The IRFB23N15DPBF is a HEXFET Power MOSFET. Applications include: High frequency DC-DC converters, Lead-Free.
Parametrics
IRFB23N15DPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 23 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 17 A; (3)IDM, Pulsed Drain Current: 92 A; (4)PD @TA = 25℃, Power Dissipation: 3.8 W; (5)PD @TC = 25℃, Power Dissipation: 136 W; (6)Linear Derating Factor: 0.9 W/℃; (7)VGS Gate-to-Source Voltage: ±30 V; (8)dv/dt Peak Diode Recovery: 4.1V/ns; (9)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to 175 ℃; (10)Soldering Temperature for 10 seconds: 300℃; (11)Mounting Torque, 6-32 or M3 Screw: 1.1N·m.
Features
IRFB23N15DPBF benefits: (1)Low Gate-to-Drain Charge to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design; (3)Fully Characterized Avalanche Voltage and Current.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFB23N15DPBF |
International Rectifier |
MOSFET MOSFT 150V 23A 90mOhm 37nC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRFB11N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
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IRFB11N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
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IRFB13N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFB13N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFB16N50K |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
Negotiable |
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IRFB16N50KPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
Negotiable |
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