Product Summary

The IRGIB10B60KD1 is an insulated gate bipolar transistor with ultrafast soft recovery diode.

Parametrics

IRGIB10B60KD1 absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃ Continuous Collector Current: 16 A; (3)IC @ TC = 100℃ Continuous Collector Current: 10 A; (4)ICM Pulse Collector Current (Ref. Fig. C.T.4): 32 A; (5)ILM Clamped Inductive Load Current: 32 A; (6)IF @ TC = 25℃ Diode Continous Forward Current: 16 A; (7)IF @ TC = 100℃ Diode Continous Forward Current: 10 A; (8)IFRM Maximum Repetitive Forward Current: 32 A; (9)VISOL RMS Isolation Voltage, Terminal to Case, t = 1 min: 2500 V; (10)VGE Gate-to-Emitter Voltage: ±20 V; (11)PD @ TC = 25℃ Maximum Power Dissipation: 44 W; (12)PD @ TC = 100℃ Maximum Power Dissipation: 22 W; (13)TJ Operating Junction and TSTG Storage Temperature Range: -55 to +175 ℃; (14)Soldering Temperature for 10 sec.: 300 ℃ (0.063 in. (1.6mm) from case); (15)Mounting Torque, 6-32 or M3 Screw: 10 lbf·in (1.1 N·m).

Features

IRGIB10B60KD1 features: (1)Low VCE (on) Non Punch Through IGBT Technology; (2)Low Diode VF; (3)10μs Short Circuit Capability; (4)Square RBSOA; (5)Ultrasoft Diode Reverse Recovery Characteristics; (6)Positive VCE (on) Temperature Coefficient; (7)Maximum Junction Temperature Rated at 175℃.

Diagrams

IRGIB10B60KD1 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRGIB10B60KD1
IRGIB10B60KD1
Other

Data Sheet
Negotiable 
IRGIB10B60KD1P
IRGIB10B60KD1P
International Rectifier
IGBT Transistors 600V Low-Vceon
Data Sheet
0-1: $2.47
1-25: $1.69
25-100: $1.26
100-250: $1.21
IRGIB10B60KD1PbF
IRGIB10B60KD1PbF
Other

Data Sheet
Negotiable