(Hong Kong)
Product Summary
The IRGP20B60PDPBF is a warp2 series IGBT with ultrafast soft recovery diode. The applications of the device include Telecom and Server SMPS, PFC and ZVS SMPS Circuits, Uninterruptable Power Supplies, Consumer Electronics Power Supplies and Lead-Free.
Parametrics
IRGP20B60PDPBF absolute maximum ratings: (1)VCES, Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃, Continuous Collector Current: 40A; (3)IC @ TC = 100℃, Continuous Collector Current: 22A; (4)ICM, Pulse Collector Current: 80A; (5)ILM, Clamped Inductive Load Current: 80 A; (6)IF @ TC = 25℃, Diode Continous Forward Current: 31A; (7)IF @ TC = 100℃, Diode Continous Forward Current: 12A; (8)IFRM, Maximum Repetitive Forward Current: 42A; (9)VGE, Gate-to-Emitter Voltage: ±20 V; (10)PD @ TC = 25℃, Maximum Power Dissipation: 220 W; (11)PD @ TC = 100℃, Maximum Power Dissipation: 86 W; (12)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to +150℃; (13)Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw: 10 lbf·in (1.1 N·m).
Features
IRGP20B60PDPBF features: (1)NPT Technology, Positive Temperature Coefficient; (2)Lower VCE(SAT); (3)Lower Parasitic Capacitances; (4)Minimal Tail Current; (5)HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode; (6)Tighter Distribution of Parameters; (7)Higher Reliability.
Diagrams
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 IRGP20B60PDPBF |
International Rectifier |
IGBT Transistors 600V Warp2 150kHz |
Data Sheet |
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IRGP20B60PDPBF |
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Data Sheet |
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