Product Summary

The IRLZ34N is an N-channel enhancement mode logic level field-effect power transistor. It features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. The IRLZ34N is intended for use in switched mode power supplies and general purpose switching applications.

Parametrics

IRLZ34N absolute maximum ratings: (1)VDSS Drain-source voltage: 55 V; (2)VDGR Drain-gate voltage: 55 V; (3)VGS Gate-source voltage: ±13 V; (4)ID Continuous drain current: 30 A; (5)IDM Pulsed drain current: 110 A; (6)PD Total power dissipation: 68 W; (7)Tj, Tstg Operating junction and storage temperature: - 55 to 175℃.

Features

IRLZ34N features: (1)VDS Drain-source voltage: 55 V; (2)ID Drain current (DC): 30 A; (3)Ptot Total power dissipation: 68 W; (4)Tj Junction temperature: 175 ℃; (5)RDS(ON) Drain-source on-state resistance VGS = 10 V: 35 mΩ.

Diagrams

IRLZ34N diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRLZ34N
IRLZ34N
International Rectifier
MOSFET N-CH 55V 30A TO-220AB
Data Sheet
1-450: $0.56
IRLZ34NL
IRLZ34NL

MOSFET N-CH 55V 30A TO-262
Data Sheet
Negotiable 
IRLZ34NPBF
IRLZ34NPBF
International Rectifier
MOSFET MOSFT 55V 27A 16.7nC 35mOhm LogLvAB
Data Sheet
0-1: $1.25
1-25: $0.77
25-100: $0.53
100-250: $0.50
IRLZ34NLPBF
IRLZ34NLPBF
International Rectifier
MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl
Data Sheet
0-1: $1.22
1-25: $0.75
25-100: $0.52
100-250: $0.49
IRLZ34NSPBF
IRLZ34NSPBF
International Rectifier
MOSFET
Data Sheet
0-1: $1.20
1-25: $0.77
25-100: $0.56
100-250: $0.48
IRLZ34NS
IRLZ34NS

MOSFET N-CH 55V 30A D2PAK
Data Sheet
Negotiable 
IRLZ34NSTRLPBF
IRLZ34NSTRLPBF
International Rectifier
MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl
Data Sheet
0-1: $1.30
1-25: $0.84
25-100: $0.61
100-250: $0.57
IRLZ34NSTRR
IRLZ34NSTRR

MOSFET N-CH 55V 30A D2PAK
Data Sheet
0-800: $0.68