(Hong Kong)
Product Summary
The SI2323DS is a P-Channel 20-V (D-S) MOSFET. It is used for Load Switch, PA Switch.
Parametrics
SI2323DS absolute maxing ratings: (1)Drain-Source Voltage VDS: -20V; (2)Gate-Source Voltage VGS: ±8V; (3)Continuous Drain Current (TJ = 150℃) ID: -4.7A at TA = 25℃; -3.8A at TA = 70℃; (4)Pulsed Drain Current IDM: -20A; (5)Continuous Source Current (Diode Conduction) IS: -1.0A; (6)Maximum Power Dissipation PD: 1.25W at TA = 25℃; 0.8W at TA = 70℃; (7)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150 ℃.
Features
SI2323DS features: TrenchFET Power MOSFET.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI2323DS-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 3.7A 0.039Ohm |
Data Sheet |
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SI2323DS-T1 |
Vishay/Siliconix |
MOSFET 20V 4.7A 0.75W |
Data Sheet |
Negotiable |
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Si2323DS |
Other |
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Data Sheet |
Negotiable |
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Si2323DS-T1-GE3 |
Vishay/Siliconix |
MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V |
Data Sheet |
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