Product Summary

The STP7NK80Z is a Zener-Protected SuperMESH Power MOSFET. It is obtained through an extreme optimization of well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The applications of the STP7NK80Z include: (1)high current, high speed switching; (2)smps for industrial application; (3)lighting (preheating).

Parametrics

STP7NK80Z absolute maixmum ratings: (1)VDS Drain-source Voltage (VGS = 0): 800 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 800 V; (3)VGS Gate- source Voltage: ±30 V; (4)ID Drain Current (continuous) at TC = 25℃: 5.2 A; (5)ID Drain Current (continuous) at TC = 100℃: 3.3 A; (6)IDM Drain Current (pulsed): 20.8 A; (7)PTOT Total Dissipation at TC = 25℃: 125 W; Derating Factor: 1 W/℃; (8)VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ): 4000 V; (9)dv/dt (1) Peak Diode Recovery voltage slope: 4.5 V/ns; (10)Tj Operating Junction Temperature: -55 to 150 ℃; (11)Tstg Storage Temperature: -55 to 150 ℃.

Features

STP7NK80Z features: (1)typical rds(on) = 1.5 Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.

Diagrams

STP7NK80Z diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STP7NK80Z
STP7NK80Z
STMicroelectronics
MOSFET N-Ch 800 Volt 5.2 A Zener SuperMESH
Data Sheet
0-640: $0.80
640-1000: $0.69
1000-2000: $0.66
2000-5000: $0.64
STP7NK80ZFP
STP7NK80ZFP
STMicroelectronics
MOSFET N-Ch 800 Volt 5.2 A Zener SuperMESH
Data Sheet
0-1: $1.60
1-10: $1.29
10-100: $1.16
100-250: $1.03