IRFU120NPBF

Fast Switching, TO251, 6.6 to 9.4A Continuous Drain current, 48W Power Dissipation

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Price:: US $0.25~0.27 / piece [Get Latest Price]

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	US $0.25~0.27

PartNumber:: IRFU120NPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-07-26

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Part Number:IRFU120NPBF
US $0.25 - 0.27
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Product Summary

The IRFU120NPBF is the Fifth Generation HEXFETs from International Rectifer which ulilizes advanced progressing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast swithing speed and ruggedized device design that HEXFET Power MOSFET IRFU120NPBF is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase infrared or wave soldering techniques. The straight lead version(IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parametrics

IRFU120NPBF absolute maximum ratings: (1)ID Continuous Drain current: 6.6 to 9.4A; (2)IDM Pulsed Drain Current: 38A; (3)PD Power Dissipation: 48W; (4)VGS Gate to Source Voltage: ±20V; (5)EAS Single Pulse Avalanceche Energy: 91mJ; (6)IAR Avalanche Current: 5.7A; (7)EAR Repetitive Avalenche energy: 4.8mJ; (8)dv/dt Peak Diode recovery dv/dt: 5.0 V/ns; (9)TJ operating Junction and Storage Temperature Range: -55 to 175℃.