(Hong Kong)
Product Summary
The P-channel MOSFET of the IRLML5203TRPBF from International Rectifier utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of the IRLML5203TRPBF provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation of the IRLML5203TRPBF are the best available.
Parametrics
IRLML5203TRPBF absolute maximum ratings: (1)VDS Drain- Source Voltage: -30 V; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ -10V: -3.0; (3)ID @ TA= 70℃ Continuous Drain Current, VGS @ -10V: -2.4 A; (4)IDM Pulsed Drain Current: -24; (5)PD @TA = 25℃ Power Dissipation: 1.25; (6)PD @TA = 70℃ Power Dissipation: 0.80; (7)Linear Derating Factor: 10 mW/℃; (8)VGS Gate-to-Source Voltage: ± 20 V; (9)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150 ℃.
Features
IRLML5203TRPBF features: (1)Ultra Low On-Resistance; (2)P-ChanneMOSFET; (3)Surface Mount; (4)Available in Tape & Reel; (5)Low Gate Charge.
Diagrams
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 IRLML5203TRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl |
Data Sheet |
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IRLM120ATF |
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Data Sheet |
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IRLM210ATF |
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Data Sheet |
Negotiable |
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