(Hong Kong)
Product Summary
The IRF7204TR is a Power MOSFET. It utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF7204TR is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. With these improvements, the IRF7204TR can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Parametrics
IRF7204TR absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V:-5.3A; (2)Continuous Drain Current, VGS @ 10V:-4.2A; (3)Pulsed Drain Current:-21A; (4)Power Dissipation:2.5W; (5)Linear Derating Factor:0.020W/℃; (6)Gate-to-Source Voltage:±12V; (7)Peak Diode Recovery dv/dt:-1.7V/nS; (8)Junction and Storage Temperature Range:-55℃ to +150℃.
Features
IRF7204TR features: (1)Adavanced Process Technology; (2)Ultra Low On-Resistance; (3)P-Channel MOSFET; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IRF7204TR |
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MOSFET P-CH 20V 5.3A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7204TRPBF |
International Rectifier |
MOSFET MOSFT PCh -20V -5.3A 60mOhm 25nC |
Data Sheet |
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